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R100F MOB34D MPSA06RA T302112 14D431KJ BFR31LT1 DP3110 01010
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  Datasheet File OCR Text:
 Transys
Electronics
LIMITED
TO-251 Plastic-Encapsulated Transistors
6. 5 0 A. 10 0 2 . 30 A. 05 0 0. 5 1 A. 03 0
B772
FEATURES
TRANSISTOR (PNP)
14. 70
5 a
5 a
0. 80 A. 0 5 0 0. 6 0 A. 0 5 0
1.
Power dissipation PCM: 1.25 W(Tamb=25)
2. 3.
BASE
2. 3 0 A. 05 0
2. 3 0 A. 0 5 0
1 . 20
0. 51 A. 03 0
123
COLLECTOR
0 0. 75 A. 10
6. 50 A. 15 0 5. 30 A. 10 0 0. 51 A. 05 0 2. 30 A. 10 0
7. 70
0 5. 50 A. 10
TO-251 TO-252-2
5. 3 0 A. 05 0
5 a
Collector current ICM: -3 A Collector-base voltage V(BR)CBO: - 40 V Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency VCE (sat) VBE(sat) fT
0 9. 70 A. 20
0. 51 A. 10 0 0 0 . 10 5 a
5 a
0 1. 60 A. 15
2. 30 A. 10 0
0. 60 A. 10 0 2. 30 A. 10 0 0. 51
123
unless otherwise specified)
Test conditions MIN -40 -30 -6 -1 -10 -1 60 32 -0.5 -1.5 50 V V MHz 400 TYP MAX UNIT V V V A A A
Ic= -100A, IE=0 Ic= -10mA, IB=0 IE= -100A, IC=0 VCB= -40V, IE=0 VCE= -30V, IB=0 VEB= -6V, IC=0 VCE= -2V, IC= -1A VCE= -2V, IC= -100mA IC= -2A, IB= -0.2 A IC= -2A, IB= -0.2 A VCE= -5V, Ic=-0.1A f =10MHz
CLASSIFICATION OF hFE (1)
Rank Range R 60-120 O 100-200 Y 160-320 GR 200-400
0 2. 70 A. 20
0 a a 9
0. 6
0. 80 A. 10 0
0 5. 50 A. 10
EMITTER
5 a
1. 20


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